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Silicon nanotubes (Si NTs) have a unique structure among the silicon nanostructure family, which is useful for diverse applications ranging from therapeutics to lithium storage/recycling. Their well-defined structure and high surface area make them ideal for sensing applications. In this work, we demonstrate the formation of Au nanoparticles (NPs) functionalized with 4-Mercaptophenylboronic acid (MPBA) on porous Si NTs (pSi NTs) fabricated using ZnO nanowires as a template. The system was characterized, and the proposed structure was confirmed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). Varying glucose concentrations in phosphate-buffered saline (PBS) (0.5–80 mM) were introduced to the Si NT nanocomposite system. The glucose is detectable at low concentrations utilizing surface-enhanced Raman spectroscopy (SERS), which shows a concentration-dependent peak shift in the benzene ring breathing mode (~1071 cm−1) of MPBA. Complementing these measurements are simulations of the Raman hot spots associated with plasmonic enhancement of the Au NPs using COMSOL. This biocompatible system is envisioned to have applications in nanomedicine and microfluidic devices for real-time, non-invasive glucose sensing. 

Using a scanning electron microscope, we irradiate graphene drums with electrons at an energy of 20 keV and a dosage of about 1.58 × 1017 electrons/cm2. The drums consist of graphene exfoliated in ambient air over holes having a diameter of 4.6 μm and etched into an SiO2 substrate. After irradiation, we observe that the drum’s suspended monolayer (ML) region has a ratio of the Raman D peak height, ID, to the Raman G peak height, IG, as high as 6.3. In contrast, the supported ML on the SiO2 substrate has an ID/IG ratio of 0.49. Previous studies have shown that graphene drums containing air can leak in a vacuum at a low rate. We attribute the high ID/IG ratio of the suspended ML to the air that may be in the drums. We propose that the air produces much adsorbed water on the ML, resulting in a high average defect density during irradiation. We present Raman maps of the full-width-at-half maximum, position, and height of the G, 2D, D, and D’ peaks before and after irradiation and maps of ID/IG and ID/ID’. We anneal the drums at temperatures from 50 to 215 °C and find that ID/IG significantly reduces to 0.42. The annealing data are analyzed using an Arrhenius plot. We also find that ID/ID’ depends on annealing temperature and has values ≥8, in the range expected for sp3 defects, for ID/IG ≤ 3.9. This irradiation method may help achieve high average defect densities in ML graphene, imparting novel and potentially valuable properties. 

Metal halide perovskites have emerged as the next generation of light emitting semiconducting materials due to their excellent properties such as tunable bandgaps, high photoluminescence quantum yield, and high color purity. Nickel oxide is a hole transport material that has been used in planar light emitting diodes (LEDs). In this paper, we develop a novel method for the large scale fabrication of metal halide perovskite nanowire arrays encapsulated inside nickel oxide nanotubes. We study the structural and spectral properties of these infiltrated perovskites nanowires and, to the best of our knowledge, for the first time report on a working LED device consisting of perovskites encapsulated inside nickel oxide nanotubes. Finally, we study the photoluminescence and electroluminescence of an LED with MAPbBr 3 inside nickel oxide nanotubes and obtain an outstanding current efficiency of 5.99 Cd A −1 and external quantum efficiency of 3.9% for the LED device. 

Abstract Silicon telluride (Si 2 Te 3 ) has emerged as one of the many contenders for 2D materials ideal for the fabrication of atomically thin devices. Despite the progress which has been made in the electric and optical properties of silicon telluride, much work is still needed to better understand this material. We report here on the Raman study of Si 2 Te 3 degradation under both annealing and in situ heating with a laser. Both processes caused pristine Si 2 Te 3 to degrade into tellurium and silicon oxide in air in the absence of a protective coating. A previously unreported Raman peak at ∼140 cm −1 was observed from the degraded samples and is found to be associated with pure tellurium. This peak was previously unresolved with the peak at 144 cm −1 for pristine Si 2 Te 3 in the literature and has been erroneously assigned as a signature Raman peak of pure Si 2 Te 3 , which has caused incorrect interpretations of experimental data. Our study has led to a fundamental understanding of the Raman peaks in Si 2 Te 3 , and helps resolve the inconsistent issues in the literature. This study is not only important for fundamental understanding but also vital for material characterization and applications. 

Abstract Monolayer (ML) molybdenum disulfide (MoS₂) is a novel 2-dimensional (2D) semiconductor whose properties have many applications in devices. Despite its potential, ML MoS₂ is limited in its use due to its degradation under exposure to ambient air. Therefore, studies of possible degradation prevention methods are important. It is well established that air humidity plays a major role in the degradation. In this paper, we investigate the effects of substrate hydrophobicity on the degradation of chemical vapor deposition (CVD) grown ML MoS 2 . We use optical microscopy, atomic force microscopy (AFM), and Raman mapping to investigate the degradation of ML MoS 2 grown on SiO 2 and Si 3 N 4 that are hydrophilic and hydrophobic substrates, respectively. Our results show that the degradation of ML MoS₂ on Si 3 N 4 is significantly less than the degradation on SiO 2 . These results show that using hydrophobic substrates to grow 2D transition metal dichalcogenide ML materials may diminish ambient degradation and enable improved protocols for device manufacturing.